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| TSHF5410 Vishay Semiconductors High Speed Infrared Emitting Diode in T-13/4 Package Description TSHF5410 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. TSHF5410 combines high speed with high radiant power at wavelength of 890 nm. Features * High modulation bandwidth * Extra high radiant power and radiant intensity * * * * * * * * * 94 8390 Low forward voltage Suitable for high pulse current operation Standard package T-13/4 ( 5 mm) Angle of half intensity = 22 Peak wavelength p = 890 nm High reliability Good spectral matching to Si photodetectors Lead (Pb)-free component Component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements. TSHF5410 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK - coded, 450 kHz or 1.3 MHz). Parts Table Part TSHF5410 Remarks MOQ: 4000 pcs Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t 5 sec, 2 mm from case tp/T = 0.5, tp = 100 s tp = 100 s Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1.5 180 100 - 40 to + 85 - 40 to + 100 260 270 Unit V mA mA A mW C C C C K/W Document Number 81303 Rev. 1.1, 26-Oct-06 www.vishay.com 1 TSHF5410 Vishay Semiconductors 200 125 RthJA = 270 K/W PV - Power Dissipation (mW) 150 IF - Forward Current (mA) 100 RthJA = 270 K/W 75 100 50 50 25 0 0 20112 0 10 20 30 40 50 60 70 80 90 100 20113 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C) Figure 1. Power Dissipation Limit vs. Ambient Temperature Figure 2. Forward Current Limit vs. Ambient Temperature Basic Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity Radiant Power Temp. Coefficient of e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of p Rise Time Fall Time Cut-Off Frequency Virtual Source Diameter IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA, tp = 20 ms IF = 100 mA Symbol VF VF TKVF IR Cj Ie Ie e TKe p TKp tr tf fc 34 125 65 650 48 - 0.35 22 890 40 0.25 30 30 12 2.1 170 Min Typ. 1.4 2.3 - 2.1 10 Max 1.6 Unit V V mV/K A pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm www.vishay.com 2 Document Number 81303 Rev. 1.1, 26-Oct-06 TSHF5410 Vishay Semiconductors Typical Characteristics Tamb = 25 C unless otherwise specified 1000 tP/T = 0.01 0.02 Tamb < 50 1000.0 IF - Forward Current (mA) Radiant Power (mW) e- 0.05 0.1 100.0 10.0 0.2 0.5 100 0.01 1.0 0.1 0.1 1.0 10 100 16971 1 10 100 1000 16031 tP - Pulse Duration (ms) IF - Forward Current (mA) Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Power vs. Forward Current 1000 1.25 e, rel - Relative Radiant Power 4 IF - Forward Current (mA) 1.0 100 0.75 tP = 100 s tP/T = 0.001 10 0.5 0.25 1 0 18873 1 2 3 0 800 20082 900 1000 VF - Forward Voltage (V) - Wavelength (nm) Figure 4. Forward Current vs. Forward Voltage Figure 7. Relative Radiant Power vs. Wavelength 0 10 20 30 Ie - Radiant Intensity (mW/sr) 100.0 Ie, rel - Relative Radiant Intensity 1000.0 40 1.0 0.9 0.8 50 60 70 80 10.0 1.0 0.7 0.1 1 18220 10 100 1000 94 8883 0.6 0.4 0.2 0 0.2 0.4 0.6 IF - Forward Current (mA) Figure 5. Radiant Intensity vs. Forward Current Figure 8. Relative Radiant Intensity vs. Angular Displacement Document Number 81303 Rev. 1.1, 26-Oct-06 www.vishay.com 3 TSHF5410 Vishay Semiconductors Package Dimensions in mm 95 1 1260 www.vishay.com 4 Document Number 81303 Rev. 1.1, 26-Oct-06 TSHF5410 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81303 Rev. 1.1, 26-Oct-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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